Sponsored by TTI.
These days, Silicon Carbide (SiC) and Gallium Nitride (GaN) are common headlines in the technology press. This is because devices built using this wide bandgap technology are superior to their silicon counterparts in all many important metrics and open new applications, which were not possible before.
This white paper describes the design and use of SiC diodes and describes their advantages in silicon devices. It then presents a new range of SiC diodes developed by Nexperia to have a thin device structure and discusses the additional advantages this offers over conventional SiC diodes in power consumption.