Taiwanese semiconductor company PANJIT International has introduced its latest series of automotive-grade 60 V N-channel MOSFETs, which include Shielded Gate Trench (SGT) technology to support automotive electronic devices.
This series is designed to deliver improved figure of merit (FOM), very low RDS(ON) and reduced power to improve performance and power efficiency in automotive electronic systems by reducing conduction and switching losses.
SGT MOSFETs are mid-key MOSFETs with increased depth and integrated charge structure that allow horizontal and vertical depletion, improve breakdown voltage and enable higher performance at the same doping concentration compared to traditional trench MOSFETs. SGT MOSFETs add a protective electrode below the gate electrode, which is connected to the source electrode. This protects the gate and drift circuit, reduces Miller power and lowers switching losses. The design also reduces the critical electric field in the drift region, reducing the amount of gate charge (Qg, @RDS(on) 3 mΩ) by 57%.
PANJIT's AEC-Q101 qualified, 60 V N-channel MOSFETs are available in a range of compact and efficient packages, including the DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA and TO-220AB -L. An effective junction temperature of up to 175° C provides modern electrical design flexibility.
Automotive applications of this series include advanced driver assistance systems (ADAS), body control unit cooling fans (BCUs), infotainment and instrument displays, LED lighting, vehicle pumps, on-board chargers and sensors.
Source: PANJIT International