US-based power transformation (EPC), which provides gallium nitride (GAN) Transportors in Gallium NK
Designed for 48 V Intermediate Voltage Bus Bus properties, EPC2367 reduces power loss, which increases efficiency and enable multiple compact compacts and applicable compacts.
EPC2367 benefits include compact 3.3 mm × 3.3 MM Qfn Package, reduce hot performance, as well as resistance to the 1,2 m m.
FET works together in cool partnership under load, improving the reliability of the system and raises high quality energy. It also provides cycling times that are taken from ancient gan generations. In 1 MHz, the 1.25 kW, EPC2367 reduces power loss while up to 1.25 times the ability to discharge in comparison with other gan and Si Mosfet.
EPC2367 GAN FET installed on the development board of EPC90164, a 40 vate bridge for 80 v high performing a voltage and 35 high-existing output. The Board is designed to facilitate the process of evaluating Power Systems to accelerate the time of their product to marketing. The 2 “X 2” board (50.8 mm x 50.8 mm) is designed to work properly and contains all sensitive monitoring elements.
“EPC2367 improves the GAN technology with ultra-low-low-lower-down-down movement, which enables the developers of the Epc CEO.
Source: EPC