Japanese parts of the rohm semiconductor has issued GNP2070TDD-Z 650 vv gan
Payment package, which indicates the integrated maximum formation, current capacity and exchange exchange, is increasingly obtained from applications that require higher power management and automotive systems.
Rohm has issued a package generator in hems in the ATX semiconductor, the Chinese semiconductor provider. ROHM plans to participate with ATX to produce automutive-grade device.
Rohm began to be produced in the abundance of its original generation-650 V Gan Hemts on April 2023, with the power of power Stage ICS power driver and 650 V Gan Hemt in one package. ROHM has introduced a new product that includes the second generation products in the package paid and added to the DFN8080 package to confirm ROHM's 650 v Gan hht hemtuk.
New products include can-on-Si chips in the pocket, achieving the amounts in the metric device that adapts resistance to resistance (RDS (on) × qoss). This contributes to other little energy efficiency in energy programs that require energy resistance and quick change.
In response to the increasingly growing gan devices, which is expected to speed up 2026, Rohm plannes to introduce the Automatic-grade GAN devices by strengthening its relationships, more than further its development efforts.
“Collaboration with Osats such as an ATX, which is advanced technical skills, allowing us to stay forward to the new-growing gan market while using the new skills to market marketing,” AP, ROHM production headquarters. “To further, we will continue to improve the performance of the GAN devices to promote small performance and efficiency of various applications.”
Source: Rohm
